Electronics

Latest Innovations

Method for Growing a Polarization Free GaN-Based Laser Diode

Prof. Bayram from the University of IL has developed a method of depositing (growing) GaN on silicon substrates with complete surface coverage of cubic phase GaN. 
...

Prof. Bayram from the University of IL has developed a method of depositing (growing) GaN on silicon substrates with complete surface coverage of cubic phase GaN. 

This technology provides a new method of integrating GaN photonics with silicon electronics. 

Applications are in light emitting diodes and transistors. 

Publication: Richard Liu and Can Bayram, "Aspect Ratio Optimization of cubic phase GaN on patterned silicon substrate using phase transition", Appl.Phys. Lett. To be submitted.

Method for Constructing Flow Constrictions Inside Microfluidic Channels (TF01064)

A necessary function for microfluidic devices used in biology is the ability to "hold" a cell or other object (e.g., embryo) in a known physical location while maintaining...

A necessary function for microfluidic devices used in biology is the ability to "hold" a cell or other object (e.g., embryo) in a known physical location while maintaining the flow around it. This is particularly useful in bioproduction and applications such as incubation/maturation, infection, fertilization, or chemical treatment of a biological object. Although lithographic etching can be used to construct the holding areas (i.e., constriction regions), this method is expensive and complex. This technology uses a simple and inexpensive method -- polymerization -- to construct flow constriction regions. A prepolymer mixture if flowed into the microfluidic channel and polymerized using an ultraviolet source. As it is polymerized, the polymer shrinks, creating a small gap at the top of the channel. This gap allows the fluid flow to continue while the cell/object is held in place. Thus, this technology enables microfluidic devices to be constructed more cost-efficiently.

MacEtch Method Using CMOS Compatible catalyst TiN

 

 

Dr. Xiuling Li from the University of IL has developed a new MacEtch method using TiN as the metal catalyst. Compared with conventional MacEtch catalysts,...

 

 

Dr. Xiuling Li from the University of IL has developed a new MacEtch method using TiN as the metal catalyst. Compared with conventional MacEtch catalysts, mostly noble metal such as Pt Au Ag, TiN has been used as insulator/adhesive layer in current CMOS production, thereby is a compatible catalyst. This method enables the combination of MacEtch with CMOS production to fabricate micro-nano structure with high-aspect ratios.

Graphene-on-Diamond Nanomembrane On-Chip Power Inductor

The graphene-on-diamond on-chip power inductor is made though a self-rolled-nanomembrane technology. It has a small footprint along with high power inductance and high...

The graphene-on-diamond on-chip power inductor is made though a self-rolled-nanomembrane technology. It has a small footprint along with high power inductance and high heat dissipation. This structure can be arranged into arrays to meet specific power converting needs in a smaller size than current methods.

 

 

An SH0 Lithium Niobate Dispersive Delay Line for Chirp Compression

The power of EM wave will get attenuated as it travels through the air. Therefore, by the time it ends up getting picked up by the receiver, the power level usually is...

The power of EM wave will get attenuated as it travels through the air. Therefore, by the time it ends up getting picked up by the receiver, the power level usually is below the detection threshold, as processing of the attenuated signal occupies the majority of the front-end receiver and thus conumes large amounts of energy. Instead of amplification (power), the invention uses chirp conversion technique which takes a chunk of input wave and compresses all the energy into a small space.

Novel Vertical Hetero- and Homo- Junction Tunnel Field-Effect Transistors Based on Multi-Layer 2D Crystals

The invention is a vertical hetero- and homo- junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and...

The invention is a vertical hetero- and homo- junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides. The novel multi-layer structure allows low power and bypassing of current limits by using BP as a channel. Compared to MS2, BP has smaller bandgap, allowing electrons to swim much more easily. In addition, using multi-layer structure allows smaller contact resistance.

Non-Reciprocal Communication Device

Professor Gaurav Bahl has developed a novel way to enable non-reciprocal communication with optical, acoustic and electromagnetic media. This innovation can be very small...

Professor Gaurav Bahl has developed a novel way to enable non-reciprocal communication with optical, acoustic and electromagnetic media. This innovation can be very small, and operate at high frequencies.

MacEtch for Ge and β-Ga2O3

This metal-assisted chemical etching (MacEtch) technology can be used to fabricate structure and texture on Ge and β-Ga2O3Et. The optoelectronic...

This metal-assisted chemical etching (MacEtch) technology can be used to fabricate structure and texture on Ge and β-Ga2O3Et. The optoelectronic devices made by this method show improvement in both optical and electrical properties.

  • Kim et al., "Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport," Adv. Funct. Mat., 2017

Millimeter-Scale Thermal Switch 

Drs. William King and Nenad Miljkovic with collaborators at the University of Illinois at Urbana-Champaign have developed a millimeter-scale high-contrast thermal switch...

Drs. William King and Nenad Miljkovic with collaborators at the University of Illinois at Urbana-Champaign have developed a millimeter-scale high-contrast thermal switch that can be used for cooling in power electronics and a variety of other electrical and thermal power systems. This liquid-metal based, electrically-controlled thermal switch controls heat transfer of thermally sensitive systems with hotspots smaller than 1 mm and as large as 1 cm and beyond. This technology has a high switching ratio (>10), high switching speed (>1Hz), and it utilizes liquid metal alloys with reduced toxicity, high thermal conductivity and surface tension. Liquid-based thermal switches are the most promising solutions for thermal management at room temperature. They allow to reduce the contact thermal resistance, enhance the operational speed and reduce heat losses. This new device will enable development of thermal circuit in the electrical and thermal power systems on a practical level.

Ultra-Low Frequency Portable RF Transmitter

Professor Bahl from the University of Illinois at Urbana-Champaign has developed a new RF transmitter capable of transmitting at frequencies below 3 kHz while exploiting...

Professor Bahl from the University of Illinois at Urbana-Champaign has developed a new RF transmitter capable of transmitting at frequencies below 3 kHz while exploiting the magnetic component of the electromagnetic field. Transmitting at these low frequencies while taking advantage of the magnetic component of the electromagnetic field will allow for transmission of RF signals through conductive material such as water or the ground. Prior technology for transmitting radio signals at such low frequencies required very large antenna structures along with a large power input. The current technology weighs less than 10 kg and fits in a backpack. This technology has applications in the military as well as oil exploration, mining, and anywhere else where data communication is desired underground or underwater.

Pages