Method for Growing a Polarization Free GaN-Based Laser Diode

Prof. Bayram from the University of IL has developed a method of depositing (growing) GaN on silicon substrates with complete surface coverage of cubic phase GaN. 

This technology provides a new method of integrating GaN photonics with silicon electronics. 

Applications are in light emitting diodes and transistors. 

Publication: Richard Liu and Can Bayram, "Aspect Ratio Optimization of cubic phase GaN on patterned silicon substrate using phase transition", Appl.Phys. Lett. To be submitted.