Electronics

Latest Innovations

Metal-Assisted Etching For Improved Porous Semiconductors

 

The invention is a novel method for manufacturing porous semiconductors, including silicon (Si), gallium nitride (GaN) and silicon carbide (SiC). The method...

Highly Reflective Interface for Distributed Bragg Reflectors (DBRs)

 

Distributed Bragg Reflectors (DBRs) are a fundamental component of optical devices requiring an optical gain, such as various types of semiconductor lasers....

Ultrathin Dielectric Oxide Films On Silicon

 

The technology is a chemical method for preparing ultrathin oxide films on silicon with low leakage currents and high capacitance, optimizing the electrical...

Multiple-Input Buck Boost Power Converter

A power converter circuit to convert multiple direct current (dc) inputs to one or more dc outputs. This dc-dc power converter allows its load to be powered by multiple,...

Nanotip Engineering Suite

 

Developed by the University of Illinois at Urbana-Champaign, this suite of six technologies enhances multiple facets of nanolithography and scanning probe...

High Strength Low-k Insulators

 

A polymer comprises at least two types of monomer units selected from: (1) diethynyl benzene units, (2) triethynyl benzene units, and (3) ester units. After curing...

Sub-10 nm fabrication: molecular templating, electron-beam sculpting and crystallization of metallic nanowires

 

This technology provides a technique for fabricating metallic structures with dimensions considerably smaller than 10 nm and the use of a focused electron beam to...

Fabrication of Microfluidic Systems and Components Using Light Initiated Polymerization

 

An innovative, cost-effective method for making and integrating fluidic microchannels. This method for ultra-rapid prototyping of microfluidic systems requiring...

Metal-Assisted Etching for Improved Porous Semiconductors

 

The invention is a novel method for manufacturing porous semiconductors, including silicon (Si), gallium nitride (GaN) and silicon carbide (SiC). The method...

Ohmic & Gate Contacts for High Electron Mobility Transistors (HEMTs)

 

Ohmic contact degradation and gate-sinking are two major degradation mechanisms that cause semiconductor devices, such as high electron mobility transistors, or...

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