Dr. Xiuling Li from the University of IL has developed a new MacEtch method using TiN as the metal catalyst. Compared with conventional MacEtch catalysts, mostly noble metal such as Pt Au Ag, TiN has been used as insulator/adhesive layer in current CMOS production, thereby is a compatible catalyst. This method enables the combination of MacEtch with CMOS production to fabricate micro-nano structure with high-aspect ratios.