The graphene-on-diamond on-chip power inductor is made though a self-rolled-nanomembrane technology. It has a small footprint along with high power inductance and high...
The graphene-on-diamond on-chip power inductor is made though a self-rolled-nanomembrane technology. It has a small footprint along with high power inductance and high heat dissipation. This structure can be arranged into arrays to meet specific power converting needs in a smaller size than current methods.
The invention is a vertical hetero- and homo- junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides. The novel multi-layer structure allows low power and bypassing of current limits by using BP as a channel. Compared to MS2, BP has smaller bandgap, allowing electrons to swim much more easily. In addition, using multi-layer structure allows smaller contact resistance.
This technology is a classifier based on a ferroelectric graphene transistor. In contrast to traditional current-mode classifiers based on CMOS technologies (which require...
This technology is a classifier based on a ferroelectric graphene transistor. In contrast to traditional current-mode classifiers based on CMOS technologies (which require 23 transistors per pixel), this classifier requires only one transistor per pixel. The device provides a new solution for image recognition with reduced circuit complexity, enhanced energy efficiency, and faster processing speed. Applications include signal or image processing and recognition.
Dr. Eden at the University of Illinois has developed a 3D microplasma photonic crystal which provides the ability to introduce or completely suppress attenuation...
Dr. Eden at the University of Illinois has developed a 3D microplasma photonic crystal which provides the ability to introduce or completely suppress attenuation resonances at will, in the microwave, millimeter wave, and terahertz spectral regions, while minimizing insertion loss. This complex 3D photonic crystal is comprised of a 3D-printed polymer scaffold, and free-standing arrays of polyimide capillaries.
Since the capillaries are suspended in free space on the scaffold, electromagnetic structures can be placed on or around the microtubes. One example of this involves depositing metal films onto each capillary with precise periodicity. In this way, each pair of neighboring metal film rings in the 3D array are effectively coupled and constitute a capacitor, creating extremely versatile, and tunable crystal performance.
This is a new method for fabricating a self-rolled-up membrane (S-RuM) membrane. The invention allows for the fabrication of high-quality-factor milliTesla- and Tesla-...
This is a new method for fabricating a self-rolled-up membrane (S-RuM) membrane. The invention allows for the fabrication of high-quality-factor milliTesla- and Tesla-level inductors for high density circuit applications and allows for the precise tuning of the inductor performance by varying the space between subsequent turns (coils), which affects the thickness of the conducting layers within the inductor. Importantly, this method provides tunable three-dimensional inductors with a reduced footprint when compared with conventional planar inductors.
Dr. Seebauer from the University of Illinois has developed a method to eliminate oxygen vacancy defects in thin-film metal oxides. The novel method of a liquid environment...
Dr. Seebauer from the University of Illinois has developed a method to eliminate oxygen vacancy defects in thin-film metal oxides. The novel method of a liquid environment enables the improvement of these materials without involving a normally difficult manufacturing process. The process enables the control of oxygen vacancies to a certain depth and density. The removal of the defect allows for the metal oxide thin-film to have better photocatalytic properties. This could be useful for sensors and power devices which are a quickly growing market. The filled vacancies also affect subsequent redox reactions by inhibiting the transfer of electrons.
