Processes

Latest Innovations

Metal-Assisted Etching For Improved Porous Semiconductors

 

The invention is a novel method for manufacturing porous semiconductors, including silicon (Si), gallium nitride (GaN) and silicon carbide (SiC). The method...

Ultrathin Dielectric Oxide Films On Silicon

 

The technology is a chemical method for preparing ultrathin oxide films on silicon with low leakage currents and high capacitance, optimizing the electrical...

Nanotip Engineering Suite

 

Developed by the University of Illinois at Urbana-Champaign, this suite of six technologies enhances multiple facets of nanolithography and scanning probe...

High Strength Low-k Insulators

 

A polymer comprises at least two types of monomer units selected from: (1) diethynyl benzene units, (2) triethynyl benzene units, and (3) ester units. After curing...

Sub-10 nm fabrication: molecular templating, electron-beam sculpting and crystallization of metallic nanowires

 

This technology provides a technique for fabricating metallic structures with dimensions considerably smaller than 10 nm and the use of a focused electron beam to...

Janus Particle Application

A printable product including a substrate including fibers. The substrate has a first side and a second side. At least one of the first side and the second side of the...

Metal-Assisted Etching for Improved Porous Semiconductors

 

The invention is a novel method for manufacturing porous semiconductors, including silicon (Si), gallium nitride (GaN) and silicon carbide (SiC). The method...

Self-Assessing Mechanochromic Materials

 

Polymer materials are ubiquitous in everyday life and are used in various applications (medical, automobile, electronics, structural, etc.). These materials...

Visual Indication of Mechanical Damage Using Microcapsule Systems

 

A self-indicating material system may include a solid polymer matrix having a first color, a first plurality of capsules in the matrix, and a plurality of...

Ohmic & Gate Contacts for High Electron Mobility Transistors (HEMTs)

 

Ohmic contact degradation and gate-sinking are two major degradation mechanisms that cause semiconductor devices, such as high electron mobility transistors, or...

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