Cobalt Precursors For Formation of Cobalt or Cobalt-Containing Material


Chemical vapor deposition (CVD) of cobalt requires a cobalt precursor that can be easily vaporized, leaving high-purity cobalt on a surface while causing no surface damage. This newly developed technology covers the composition of new cobalt precursors and a method for producing high-quality cobalt (or cobalt-containing) films and powders using those precursors.


Because of the substantial surface damage created by using physical vapor deposition (PVD) to deposit cobalt, researchers have become interested in using chemical vapor deposition (CVD). This requires a cobalt precursor that can be easily vaporized and that will leave high-purity cobalt on a surface while causing no surface damage. New technology developed by researchers at the University of Illinois provides novel organometallic compounds with relatively high vapor pressures and good thermal stability that leave pure cobalt on a surface without requiring hydrogen. The resulting compounds, which can be isolated as volatile liquids or solids, vaporize easily and deposit cobalt effectively under reduced pressure, producing very high purity cobalt films.


This innovative new technology can be used by the semiconductor industry for depositing cobalt or cobalt-containing films such as CoSi2 using chemical vapor deposition (CVD). The technology may also be advantageous for important future applications in areas such as magneto-optics and magnetic memory applications.


  • Easy implementation: This technology has low deposition temperatures, and requires no reducing agent. By-products of the process are recycled, eliminating added safety and health issues.
  • Safer deposition: This method requires no hydrogen.
  • More effective deposition: Precursors are easily vaporized for improved cobalt deposition. This technology achieves high purity of the films deposited below 300 degrees C. Unlike conventional physical deposition methods, this method yields cobalt films on 3-D surfaces with a smooth, dense surface morphology without surface damage. High stability towards oxygen and high thermal stability.
  • Versatility: This method can be used for pure cobalt and for oxides, as well as for nickel and iron triads.