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Home > III-V Metal Assisted Chemical Etching to Produce High Aspect Ratio III-V Semiconductor Nanostructures

III-V Metal Assisted Chemical Etching to Produce High Aspect Ratio III-V Semiconductor Nanostructures 

III-V Metal Assisted Chemical Etching to Produce High Aspect Ratio III-V Semiconductor Nanostructures [1]

This technology is a new method for creating high aspect ratio III-V semiconductor nanostructures. Unlike currently used commercial technologies, this method does not damage the crystal lattice of the existing structure, thus eliminating defects that hinder the material’s transport and optical properties.

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[1] https://otm.illinois.edu/technologies/iii-v-metal-assisted-chemical-etching-produce-high-aspect-ratio-iii-v-semiconductor