Ohmic contact degradation and gate-sinking are two major degradation mechanisms that cause semiconductor devices, such as high electron mobility transistors, or HEMTs, to fail. In general, the rapid diffusion of contact
metals into the indium phosphide substrates has restricted processing temperatures to 300ºC and reliable operating temperatures have been limited to 200ºC to 250ºC.
This set of technologies embodies two similar methods for improving reliability and performance of contacts in indium phosphide-based semiconductors.