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Micro/Nano Scale

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Improvements for electically assisted chemical oxygen-iodine laser In one embodiment of the present invention an oxygen iodine laser includes a gas mixing section. Ground state oxygen and a carrier gas are introduced into the... Read More In one embodiment of the present invention an oxygen iodine laser includes a gas mixing section. Ground state oxygen and a carrier gas are introduced into the first gas mixing section, sometimes separately. The laser includes a discharge region to generate at least said excited oxygen from the flow of the first gas mixing section. A sensitizer gas having a lower ionization threshold than ground state oxygen is also introduced into the first gas mixing section, such that electrons are more easily produced in the electrical generator. The laser system includes introducing a source of iodine into the excited singlet delta oxygen flow to generate a laser-active gas. In another embodiment a conditioner is placed into the gas mixing section to help mix the flow and/or introduce one or more of the aforementioned gases.
High-Resolution Electrohydrodynamic Jet Printing for Printed Electronics Electrohydrodynamic jet printing has been largely ignored in the high resolution graphics and electronics fabrication industries because previous methods used... Read More Electrohydrodynamic jet printing has been largely ignored in the high resolution graphics and electronics fabrication industries because previous methods used broad and blunt nozzles that did not provide the resolutions and accuracy of other methods. Because e-jet printing also required a high voltage and led to significant positioning errors, it was restricted to use in modest resolution applications. This new approach to e-jet printing produces a higher resolution using nozzles with much smaller internal diameters than previous methods. In former methods, e-jet printing was limited to dot diameters of ~15 micrometers. This new method can produce dots as small as 250 nanometers and line widths as narrow as 700 nanometers. Details E-jet printing uses electric fields to create the necessary fluid flows to deliver inks to a substrate. While this approach has been explored for modest resolutions, this new approach deals specifically with high resolution printing. The e-jet uses nozzles have much smaller internal diameters than previous methods. A voltage applied between the nozzle and the metal plate allows for greater accuracy in high resolution printing. This method is now in development with multiple nozzles which will allow for greatly increased printing speed. Applications Inkjet and printed electronics industries, as well as the security, biotechnology and photonics industries. Benefits Small nozzle internal diameters, less than 30 micrometers, coupled with low volt electric charge, allows for very high resolution printing. Can print nearly any chemical composition of ink without requiring a specific type of ink for high resolution printing. Distribution of electric field lines through low voltage results in minimal lateral variations and greater accuracy in high resolution printing. Can be used to print bulk single walled carbon nanotubes, on almost any substrate.
Nanoscale, Electrified Liquid Jets for High Resolution Printing of Charge The ability to print a polarized electrical charge onto a medium, or charge patterning, is currently in the early stages of development. A similar technology... Read More The ability to print a polarized electrical charge onto a medium, or charge patterning, is currently in the early stages of development. A similar technology commonly used in office printers, Xerography, thrives in large size regimes. There exist only a few competitive technologies capable of printing at the nanometer scale. Current technologies use processes that provide only low resolutions and relatively poor control over the printed charges. For example, current atomic force microscopy probes can provide suitable charges, but are only able for use on specialized materials. This technology has been designed to enable the printing of electrical charges on a nanoscale resolution. This technology works by modifying an E-Jet printer so that electric charges are used to manipulate a fluid medium and imprint a net positive or negative charge onto a nearly any surface. Applications This technology may be used for: Electrostatic control of nano-electric mechanical devices Guided assembly of charged particles or nanostructures Modulation of activity in biological systems Invisible, printed security codes Benefits Enables complex patterns of alternating charge with nanoscale resolutions Allows highly controlled amounts of material transfer Printing can be performed on nearly any surface
Transient Electronics Utilizing Conventional Foundry Processes Researchers from the University of Illinois have developed a process that is fully compatible with conventional foundry processes for manufacturing transient electronics.... Read More Researchers from the University of Illinois have developed a process that is fully compatible with conventional foundry processes for manufacturing transient electronics. Utilizing conventional foundry processes allows high volume, low cost production of transient electronics which may expedite commercialization of transient technology. This technology was developed in the laboratory of Dr. John Rogers, who has received international recognition for his work on bio-integrated electronics.
Scalable Semiconducting Carbon Nanotube Purification Researchers fromt the University of Illinois have developed a method of identifying and removing the metallic carbon nanotubes in an array without damaging the... Read More Researchers fromt the University of Illinois have developed a method of identifying and removing the metallic carbon nanotubes in an array without damaging the semiconducting carbon nanotubes. The method is nearly 100% effective and scalable to large arrays. This technology enables the large-scale creation of CNT arrays with a very high I on/I off ratios. A larger ratio means less lost power while off, faster switching time, and lower operating voltage. This technology was developed in the laboratory of Dr. John Rogers, who has received international recognition for his work on bio-integrated electronics.
Superconformal Chemical Vapor Deposition Manufacturers can not achieve superconformal (bottom-up) filling of high aspect ratio features by a modified chemical vapor deposition method. The CVD precursor... Read More Manufacturers can not achieve superconformal (bottom-up) filling of high aspect ratio features by a modified chemical vapor deposition method. The CVD precursor flux is augmented by a small flux of a growth suppressor, which slows deposition near the upper surface of the substrate while permitting growth at normal rates deep in a trench or via. Details As circuit densities increase, the width of their gap structures decrease, making uniform deposition of semiconductor materials more difficult and more expensive. In order to keep-up with the demand for increasing miniaturization, transistor manufacturers have developed several novel alternatives to physical layer deposition. Among the most successful of these alternatives is Atomic Layer Deposition (ALD), a technique that essentially builds thin-film depositions one atom-layer at a time. Atomic layer deposition, however, is slow and must be repeatedly exposed to alternating reactive gasses. Electrochemical Deposition (ECD) has also been used as a solution in increasing circuit densities, but ECD is limited to certain materials and requires an additional "wet processing" step. Superconformal CVD avoids these obstacles through super heating elemental hydrogen or nitrogen, changing the gas into its atomic, or plasmatic, state. During the chemical deposition process, a plasma beam that is directed at the substrate suppresses the chemical reaction along the surface of the etched wafer, preventing undesirable material accumulation around the cusp of the wafer's trenches. Applications For use in the development of micro- and nano-scale semiconductor devices, Superconformal CVD gives producers of microchips, MEMS, and various other microelectronic devices greater control over their manufacturing process. All current methods of CVD: Superconformal CVD has been demonstrated to be successful for the deposition of several different types of materials. The technique should be widely applicable for the superconformal deposition of essentially any material, although additional development work may be required to identify the best combination of suppressor gas and growth gas. Benefits The semiconductor device industry strives to develop manufacturing techniques to meet increasingly stringent design rules. By offering a gas-phase method for achieving superconformal, bottom-up filling of features with high aspect-ratios, this technology solves a long-standing manufacturing obstacle. Eliminates Pinch-off: Pinch-off occurs when unwanted film deposition near the opening of a trench or via accumulates to the point that the gap closes. Pinch-off creates voids within a trench or via, resulting in reduced device performance. These problems have proven difficult to overcome; alternative manufacturing methods - atomic layer deposition (ALD) and electrochemical deposition (ECD) - require several extra steps. Fast and inexpensive: Our Superconformal Chemical Vapor Deposition method is fast and inexpensive and does not require extra chemical washing or polishing steps. The process is compatible with existing microelectronic manufacturing methods. Clean deposition: Atomic hydrogen often serves as an effective suppressor gas, and a significant advantage of its use is that impurities are not introduced that could compromise device performance. The metastable nature of the atomic hydrogen ensures that it rapidly recombines on and desorbs from the surface as molecular hydrogen gas. High Aspect Ratio Processes: With our improved method, pinch-off is reduced or eliminated, often achieving complete filling even for aspect ratios as high as 50:1.
Metal Complexes for Depositing Metal-Containing Thin Films This technology is a family of metal complexes that can be used for depositing metal compounds. Read More This technology is a family of metal complexes that can be used for depositing metal compounds.
Magnetic-free Solution for On-chip Optical Communication Dr. Bahl from the University of Illinois has discovered a new method to create non-reciprocal property without using external magnetic field. The method employs... Read More Dr. Bahl from the University of Illinois has discovered a new method to create non-reciprocal property without using external magnetic field. The method employs Brillouin Stimulated Induced Transparency (BSIT), by adding a laser and a specifically designed microns-sized resonator. Applying BSIT can significantly reduce the size and cost, and also bring about the possibility for magnet-free on-chip application.
Droplet Manipulation through Novel Fluidic Channel Geometries Dr. Bailey from the University of IL has invented a new fluidic device for droplet manipulation for use in droplet-based analysis, such as PCR in DNA sequencing.... Read More Dr. Bailey from the University of IL has invented a new fluidic device for droplet manipulation for use in droplet-based analysis, such as PCR in DNA sequencing. Sample preparation has been longing an high through-put, automated solution due to its intensive labor cost. This chip-scale fluidic device enables multiple droplet manipulations, such as splitting, addition, extraction in one single geometry. With further development it even has possibility to change droplet concentration.
Improved Ion-Implanted pn Junctions in Semiconductors The invention improves the process of ion implantation and annealing, which is used to introduce dopants into a semiconductor to make pn junctions. The... Read More The invention improves the process of ion implantation and annealing, which is used to introduce dopants into a semiconductor to make pn junctions. The improvements control the motion of bulk semiconductor defects such as interstitial atoms through control of surface chemistry. This leads to a reduction of the depth and electrical resistance of the pn junction. Details The invention concerns process improvements to ion implantation and annealing technology, which is used to introduce dopants into a semiconductor in order to make pn junctions. The improvements control the motion of bulk semiconductor defects such as interstitial atoms through control of surface chemistry. The surface chemistry changes the intrinsic ability of the surface to absorb defects that diffuse to it. The preferential loss of Si interstitials keeps electrically active dopant fixed in the lattice by inhibiting the "kick out" reaction that makes such dopant atoms mobile and inactive. The interstitial loss rate is controlled by the introduction of an additional step in the annealing process. The surface chemistry also changes the interaction of electrically charged defects with charges at the surface by greatly reducing the charge buildup at the surface and therefore reducing the surface repulsion effect, which increases the activated dopant concentration. Applications This technology can be applied to almost any product that uses higher end (< 90 nm) integrated circuits. Not relevant to technologies that use lower resolution since current pn junction technology is acceptable. Examples of such applications include: Computers Communications Electronics Benefits Pn junction with reduced depth and increased dopant activation: Leads to transistor devices with higher performance Compatible with current manufacturing technologies: Avoids the large costs associated with paradigm-changing technologies Adjusted loss rate of interstitials to the surface: Offers highly controllable mechanism for defect engineering.

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